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| (R) BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 s APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. 3 2 INTERNAL SCHEMATIC DIAGRAM R 1 Typ.= 7K R 2 Typ.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature BD677/A BD678/A 60 60 Value BD679/A BD680/A 80 80 5 4 6 0.1 40 -65 to 150 150 BD681 BD682 100 100 V V V A A A W o o Unit C C For PNP types voltage and current values are negative. November 2003 1/6 BD677/677A/678/678A/679/679A/680/680A/681/682 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CBO V CE = rated V CBO T C = 100 o C Min. Typ. Max. 0.2 2 0.5 2 Unit mA mA mA mA V CE = half rated VCEO V EB = 5 V I C = 50 mA for BD677/677A/678/678A for BD679/679A/680/680A for BD681/682 for BD677/678/679/680/681/682 I C = 1.5 A I B = 30 mA for BD677A/678A/679A/680A IC = 2 A I B = 40 mA for BD677/678/679/680/681/682 I C = 1.5 A V CE = 3 V for BD677A/678A/679A/680A IC = 2 A V CE = 3 V for BD677/678/679/680/681/682 I C = 1.5 A V CE = 3 V for BD677A/678A/679A/680A IC = 2 A V CE = 3 V I C = 1.5 A V CE = 3 V f = 1MHz 750 750 1 V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) Collector-Emitter Saturation Voltage 60 80 100 2.5 2.8 2.5 2.5 V V V V V V V V BE Base-Emitter Voltage h FE DC Current Gain h fe Small Signal Current Gain * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas Derating Curve 2/6 BD677/677A/678/678A/679/679A/680/680A/681/682 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) 3/6 BD677/677A/678/678A/679/679A/680/680A/681/682 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward Voltage (PNP types) 4/6 BD677/677A/678/678A/679/679A/680/680A/681/682 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10 o DIM. 7.4 10.5 0.7 0.40 2.4 1.0 15.4 inch MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 3.2 2.54 0.084 0.05 0.011 10o 0.118 0.126 0.100 TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 TYP. 2.2 4.4 3.8 3 1: Base 2: Collector 3: Emitter 0016114/B 5/6 BD677/677A/678/678A/679/679A/680/680A/681/682 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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